Paper Titles

SiC Single Crystal Growth by Sublimation: Experimental and Numerical Results
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Impact of SiC Source Material on Temperature Field and Vapor Transport During SiC PVT Crystal Growth Process
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Defect Reduction in Sublimation Grown Silicon Carbide Crystals by Adjustment of Thermal Boundary Conditions
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Progress in 4H-SiC Bulk Growth
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Stability Criteria for 4H-SiC Bulk Growth
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Growth Related Distribution of Secondary Phase Inclusions in 6H-SiC Single Crystals
p.29

Investigation of a PVT SiC-Growth Set-up Modified by an Additional Gas Flow
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Mass Transport and Powder Source Evolution in Sublimation Growth of SiC Bulk Crystals
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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Progress in 4H-SiC Bulk Growth

Progress in 4H-SiC Bulk Growth

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

21-24

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.21

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Online since:

January 2001

Authors:

Mikhail Anikin, Etienne Pernot, Bernard Pelissier, Michel Pons, Alexander Pisch, Claude Bernard, Thierry Billon, Christian Faure, Cécile Moulin, Roland Madar

Keywords:

4H-SiC Sublimation Growth, Crack, Crystal Shape, Defect

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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