Paper Titles

Preface and Overview

Large Diameter, Low Defect Silicon Carbide Boule Growth
p.3

Sponsors and Committees
p.4

SiC Single Crystal Growth by Sublimation: Experimental and Numerical Results
p.7

Impact of SiC Source Material on Temperature Field and Vapor Transport During SiC PVT Crystal Growth Process
p.11

Defect Reduction in Sublimation Grown Silicon Carbide Crystals by Adjustment of Thermal Boundary Conditions
p.15

Progress in 4H-SiC Bulk Growth
p.21

HomeMaterials Science ForumMaterials Science Forum Vols. 353-356SiC Single Crystal Growth by Sublimation:...

SiC Single Crystal Growth by Sublimation: Experimental and Numerical Results

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

7-10

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.7

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Online since:

January 2001

Authors:

Cécile Moulin, Michel Pons, Alexander Pisch, Philippe Grosse, Christian Faure, Alain Basset, Gérard Basset, Antoine Passero, Thierry Billon, Bernard Pelissier, Mikhail Anikin, Etienne Pernot, Petra Pernot-Rejmánková, Roland Madar

Keywords:

Defect, Heat Transfer Simulation, SiC Sublimation Growth

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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