Preface and Overview
Large Diameter, Low Defect Silicon Carbide Boule Growth
p.3
p.3
Sponsors and Committees
p.4
p.4
Preface
p.6
p.6
SiC Single Crystal Growth by Sublimation: Experimental and Numerical Results
p.7
p.7
Overview
p.8
p.8
Impact of SiC Source Material on Temperature Field and Vapor Transport During SiC PVT Crystal Growth Process
p.11
p.11
Defect Reduction in Sublimation Grown Silicon Carbide Crystals by Adjustment of Thermal Boundary Conditions
p.15
p.15
Progress in 4H-SiC Bulk Growth
p.21
p.21
Sponsors and Committees
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 353-356)
Pages:
4-4
Online since:
January 2001
Сopyright:
© 2001 Trans Tech Publications Ltd. All Rights Reserved
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