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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Defect Reduction in Sublimation Grown Silicon...

Defect Reduction in Sublimation Grown Silicon Carbide Crystals by Adjustment of Thermal Boundary Conditions

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

15-20

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.15

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Online since:

January 2001

Authors:

Erwin Schmitt, Michael Rasp, Arnd Dietrich Weber, M. Kölbl, Robert Eckstein, L. Kadinski, M. Selder

Keywords:

Defect, Numerical Simulation, Supersaturation, Thermal Gradients

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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