Paper Titles

Impact of SiC Source Material on Temperature Field and Vapor Transport During SiC PVT Crystal Growth Process
p.11

Defect Reduction in Sublimation Grown Silicon Carbide Crystals by Adjustment of Thermal Boundary Conditions
p.15

Progress in 4H-SiC Bulk Growth
p.21

Stability Criteria for 4H-SiC Bulk Growth
p.25

Growth Related Distribution of Secondary Phase Inclusions in 6H-SiC Single Crystals
p.29

Investigation of a PVT SiC-Growth Set-up Modified by an Additional Gas Flow
p.33

Mass Transport and Powder Source Evolution in Sublimation Growth of SiC Bulk Crystals
p.37

Some Aspects of Sublimation Growth of SiC Ingots
p.41

HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Stability Criteria for 4H-SiC Bulk Growth

Stability Criteria for 4H-SiC Bulk Growth

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2000

Info:

Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

25-28

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.25

Citation:

Cite this paper

Online since:

January 2001

Authors:

Thomas L. Straubinger, Matthias Bickermann, Dieter Hofmann, Roland Weingärtner, Peter J. Wellmann, Albrecht Winnacker

Keywords:

4H-SiC, Polytype, PVT

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2001 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: