Materials Science Forum Vols. 353-356

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https://doi.org/10.4028/www.scientific.net/MSF.353-356

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Table of Contents

Paper Title Page

Ab Initio Study of Silicon Carbide: Bulk and Surface Structures

Authors: C. Raffy, L. Magaud, Elisabeth Blanquet, Michel Pons, A. Pasturel

111

SiC Defect Density Reduction by Epitaxy on Porous Surfaces

Authors: Stephen E. Saddow, Marina G. Mynbaeva, Wolfgang J. Choyke, Robert P. Devaty, Song Bai, Galyna Melnychuck, Yaroslav Koshka, Vladimir Dmitriev, C.E.C. Wood

115

Effect of Sublimation Growth on the Structure of Porous Silicon Carbide: SEM and X-Ray Diffraction Investigations

Authors: N.S. Savkina, V.V. Ratnikov, V.B. Shuman, Alexander A. Lebedev

119

Gaseous Etching Effects on Homoepitaxial Growth of SiC on Hemispherical Substrates Using CVD

Authors: Shigehiro Nishino, Yasuichi Masuda, Satoru Ohshima, Chacko Jacob

123

Low Temperature Selective and Lateral Epitaxial Growth of Silicon Carbide on Patterned Silicon Substrates

Authors: Chacko Jacob, P. Pirouz, Shigehiro Nishino

127

Characterization of 4H-SiC Epilayers Grown at a High Deposition Rate

Authors: Hidekazu Tsuchida, Takashi Tsuji, Isaho Kamata, Tamotsu Jikimoto, Hiroyuki Fujisawa, Shinji Ogino, Kunikaza Izumi

131

Control of Surface Morphologies for Epitaxial Growth on Low Off-Angle 4H-SiC (0001) Substrates

Authors: Koh Masahara, Mitsuhiro Kushibe, H. Ohno, Kazutoshi Kojima, Tetsuo Takahashi, Yuuki Ishida, Takaya Suzuki, Tomoyuki Tanaka, Sadafumi Yoshida, Kazuo Arai

135

Surface Morphology of 4H-SiC Inclined towards <1100> and <1120> Grown by APCVD Using the Si₂Cl₆+C₃H₈ System

Authors: Yasuichi Masuda, Satoru Ohshima, Chacko Jacob, Shigehiro Nishino

139

Growth of 3C-SiC Using Off-Oriented 6H-SiC Substrates

Authors: Mikael Syväjärvi, Rositza Yakimova, Henrik Jacobsson, Erik Janzén

143

SiC Polytype Transformation on the Growth Surface

Authors: E.N. Mokhov, S.K. Obyden, A.D. Roenkov, G.V. Saparin, Yu.A. Vodakov

147