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Vols. 353-356
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Materials Science Forum Vols. 353-356

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356

ToC:

Table of Contents

Paper Title Page

Combined Scanning Tunneling Microscopy and Photoemission Studies of the β-SiC(100) c(4x2) Surface Reconstruction
Authors: V. Derycke, P. Fonteneau, V.Yu. Aristov, H. Enriquez, P. Soukiassian
235
Investigation of the SiC Surface after Nitrogen Plasma Treatment
Authors: L.A. Bereznjakova, A.V. Shchukarev, V.I. Ivanov-Omskii
239
Morphology of Sublimation Grown 6H-SiC(000-1) Surfaces
Authors: D. Schulz, J. Dolle, H. J. Rost, D. Siche, Jürgen Wollweber
243
Germanium on SiC(0001): Surface Structure and Nanocrystals
Authors: Bernd Schröter, K. Komlev, Ute Kaiser, G. Heß, G. Kipshidze, W. Richter
247
Origin of the Excellent Thermal Stability of Al/Si-Based Ohmic Contacts to p-Type LPE 4H-SiC
Authors: Liliana Kassamakova, Roumen Kakanakov, Ivan Kassamakov, Konstantinos Zekentes, Katerina Tsagaraki, Genoveva Atanasova
251
Ion-Irradiation Effect on the Ni/SiC Interface Reaction
Authors: Fabrizio Roccaforte, Lucia Calcagno, Paolo Musumeci, Francesco La Via
255
Analysis of Strain and Defect Formation of Low-Dimensional Structures in SiC
Authors: Ute Kaiser, K. Saitoh, A. Chuvilin
259
Source Material Related Distribution of Defects in 6H-SiC Single Crystals
Authors: H. J. Rost, D. Siche, J. Dolle, D. Schulz, Jürgen Wollweber
263
Characterization of 2 Inch SiC Wafers Made by the Sublimation Method
Authors: Makato Sasaki, Hiromu Shiomi, Shigehiro Nishino
267
Ion Bombardment Induced Damage in Silicon Carbide Studied by Ion Beam Analytical Methods
Authors: E. Szilágyi, N.Q. Khánh, Zsolt E. Horváth, T. Lohner, Gábor Battistig, Z. Zolnai, E. Kótai, J. Gyulai
271

Showing 61 to 70 of 198 Paper Titles

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