Origin of the Excellent Thermal Stability of Al/Si-Based Ohmic Contacts to p-Type LPE 4H-SiC

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Periodical:

Materials Science Forum (Volumes 353-356)

Edited by:

G. Pensl, D. Stephani and M. Hundhausen

Pages:

251-254

DOI:

10.4028/www.scientific.net/MSF.353-356.251

Citation:

L. Kassamakova et al., "Origin of the Excellent Thermal Stability of Al/Si-Based Ohmic Contacts to p-Type LPE 4H-SiC", Materials Science Forum, Vols. 353-356, pp. 251-254, 2001

Online since:

January 2001

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$35.00

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