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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Origin of the Excellent Thermal Stability of...

Origin of the Excellent Thermal Stability of Al/Si-Based Ohmic Contacts to p-Type LPE 4H-SiC

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

251-254

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.251

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Online since:

January 2001

Authors:

Liliana Kassamakova, Roumen Kakanakov, Ivan Kassamakov, Konstantinos Zekentes, Katerina Tsagaraki, Genoveva Atanasova

Keywords:

Atomic Force Microscope (AFM), Ohmic Contact, Thermal Stability, TLM, X-Ray Photoelectron Spectroscopy (XPS)

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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