Source Material Related Distribution of Defects in 6H-SiC Single Crystals

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Periodical:

Materials Science Forum (Volumes 353-356)

Edited by:

G. Pensl, D. Stephani and M. Hundhausen

Pages:

263-266

DOI:

10.4028/www.scientific.net/MSF.353-356.263

Citation:

H. J. Rost et al., "Source Material Related Distribution of Defects in 6H-SiC Single Crystals", Materials Science Forum, Vols. 353-356, pp. 263-266, 2001

Online since:

January 2001

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$35.00

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