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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Source Material Related Distribution of Defects in...

Source Material Related Distribution of Defects in 6H-SiC Single Crystals

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

263-266

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.263

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Online since:

January 2001

Authors:

H. J. Rost, D. Siche, J. Dolle, D. Schulz, Jürgen Wollweber

Keywords:

Defect Distribution, Inclusion, SiC Bulk Growth, Source Composition

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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