Paper Titles

Source Material Related Distribution of Defects in 6H-SiC Single Crystals
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Characterization of 2 Inch SiC Wafers Made by the Sublimation Method
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Ion Bombardment Induced Damage in Silicon Carbide Studied by Ion Beam Analytical Methods
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Effects of Hydrogen Implantation and Annealing on the Vibrational Properties of 6H-SiC
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4H- and 6H-SiC Rutherford Back Scattering-Channeling Spectrometry: Polytype Finger Printing
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X-ray Diffraction, Micro-Raman and Birefringence Imaging of Silicon Carbide
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X-Ray Diffraction Line Profile Analysis of Neutron Irradiated 6H-SiC
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High-Resolution XRD Evaluation of Thick 4H-SiC Epitaxial Layers
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Defect Analysis of SiC Sublimation Growth by the In-Situ X-Ray Topography
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HomeMaterials Science ForumMaterials Science Forum Vols. 353-3564H- and 6H-SiC Rutherford Back...

4H- and 6H-SiC Rutherford Back Scattering-Channeling Spectrometry: Polytype Finger Printing

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

279-282

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.279

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Online since:

January 2001

Authors:

Roberta Nipoti, A. Carnera

Keywords:

Channeling, Ion Beam Analysis

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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