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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Ion Bombardment Induced Damage in Silicon Carbide...

Ion Bombardment Induced Damage in Silicon Carbide Studied by Ion Beam Analytical Methods

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

271-274

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.271

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Online since:

January 2001

Authors:

E. Szilágyi, N.Q. Khánh, Zsolt E. Horváth, T. Lohner, Gábor Battistig, Z. Zolnai, E. Kótai, J. Gyulai

Keywords:

Carbon Sublattice, Ion Implantation, Nuclear Resonance, Radiation Damage, Silicon Carbide (SiC)

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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