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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Defect Analysis of SiC Sublimation Growth by the...

Defect Analysis of SiC Sublimation Growth by the In-Situ X-Ray Topography

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

295-298

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.295

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Online since:

January 2001

Authors:

Tomohisa Kato, Naoki Oyanagi, Hirotaka Yamaguchi, Shin Ichi Nishizawa, Kazuo Arai

Keywords:

Defect, In Situ Observation, Modified Lely Method, X-Ray Topography

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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