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Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes
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Micropipe Closing via Thick 4H-SiC Epitaxial Growth Involving Structural Transformation of Screw Dislocations
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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356A Simple Non-Destructive Technique to Detect...

A Simple Non-Destructive Technique to Detect Micropipes in Silicon Carbide

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

303-306

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.303

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Online since:

January 2001

Authors:

D.J. Morrison, A. Keir, I.H. Preston, Keith P. Hilton, Michael J. Uren, C. Mark Johnson

Keywords:

Crystalline Defects, Electrolysis, Micropipe

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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