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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356High-Resolution XRD Evaluation of Thick 4H-SiC...

High-Resolution XRD Evaluation of Thick 4H-SiC Epitaxial Layers

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

291-294

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.291

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Online since:

January 2001

Authors:

Henrik Jacobsson, Rositza Yakimova, Mikael Syväjärvi, Jens Birch, T.O. Tuomi, Erik Janzén

Keywords:

4H-SiC, Epitaxial Layer, High Resolution X-Ray Diffraction (HR-XRD), Synchrotron Topography

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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