Growth Evolution of Dislocation Loops in Ion Implanted 4H-SiC

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Periodical:

Materials Science Forum (Volumes 353-356)

Edited by:

G. Pensl, D. Stephani and M. Hundhausen

Pages:

315-318

Citation:

P.O.Å. Persson and L. Hultman, "Growth Evolution of Dislocation Loops in Ion Implanted 4H-SiC", Materials Science Forum, Vols. 353-356, pp. 315-318, 2001

Online since:

January 2001

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