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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Quantitative Modeling of Hydrogen Diffusion and...

Quantitative Modeling of Hydrogen Diffusion and Reactivation of H-Passivated Al-Acceptors in SiC

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

331-334

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.331

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Online since:

January 2001

Authors:

C. Hülsen, N. Achtziger, J. Herold, W. Witthuhn

Keywords:

Acceptor, Diffusion, Dissociation, Hydrogen, Passivation, Recombination

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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