Line Broadening of Phonons in the Raman Spectra of Isotopically Disordered SiC

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Periodical:

Materials Science Forum (Volumes 353-356)

Edited by:

G. Pensl, D. Stephani and M. Hundhausen

Pages:

341-344

DOI:

10.4028/www.scientific.net/MSF.353-356.341

Citation:

S. Rohmfeld et al., "Line Broadening of Phonons in the Raman Spectra of Isotopically Disordered SiC", Materials Science Forum, Vols. 353-356, pp. 341-344, 2001

Online since:

January 2001

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$35.00

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