Paper Titles

Micropipe Closing via Thick 4H-SiC Epitaxial Growth Involving Structural Transformation of Screw Dislocations
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Growth Evolution of Dislocation Loops in Ion Implanted 4H-SiC
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Lattice Parameter Measurements of 3C-SiC Thin Films Grown on 6H-SiC(0001) Substrate Crystals
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Self Diffusion in SiC: the Role of Intrinsic Point Defects
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Modeling of Boron Diffusion in Silicon Carbide
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Quantitative Modeling of Hydrogen Diffusion and Reactivation of H-Passivated Al-Acceptors in SiC
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Optical Characterization of SiC Materials: Bulk and Implanted Layers
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Line Broadening of Phonons in the Raman Spectra of Isotopically Disordered SiC
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Micro-Raman and Photoluminescence Study on n-type 6H-SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Modeling of Boron Diffusion in Silicon Carbide

Modeling of Boron Diffusion in Silicon Carbide

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

327-330

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.327

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Online since:

January 2001

Authors:

Hartmut Bracht, Nicolaas Stolwijk, Michael Laube, Gerhard Pensl

Keywords:

Boron, Diffusion, Implantation, Kick-Out Mechanism, SIMS

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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