Paper Titles

Modeling of Boron Diffusion in Silicon Carbide
p.327

Quantitative Modeling of Hydrogen Diffusion and Reactivation of H-Passivated Al-Acceptors in SiC
p.331

Optical Characterization of SiC Materials: Bulk and Implanted Layers
p.335

Line Broadening of Phonons in the Raman Spectra of Isotopically Disordered SiC
p.341

Micro-Raman and Photoluminescence Study on n-type 6H-SiC
p.345

Low-Frequency Vibrational Spectroscopy in SiC Polytypes
p.349

Free Carrier Diffusion in 4H-SiC
p.353

Valence Band Splittings of 15R-SiC Measured using Wavelength Modulated Absorption Spectroscopy
p.357

Zeeman Effect of D₁ Bound Exciton in 4H-SiC
p.361

HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Micro-Raman and Photoluminescence Study on n-type...

Micro-Raman and Photoluminescence Study on n-type 6H-SiC

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2000

Info:

Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

345-348

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.345

Citation:

Cite this paper

Online since:

January 2001

Authors:

Zhe Chuan Feng, S.J. Chua, A.G. Evans, John W. Steeds, K.P.J. Williams, G.D. Pitt

Keywords:

6H-SiC, Microscope, n-Type Doping, Photoluminescence (PL), Raman Scattering

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2001 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: