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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Zeeman Effect of D1 Bound Exciton in 4H-SiC

Zeeman Effect of D₁ Bound Exciton in 4H-SiC

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

361-364

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.361

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Online since:

January 2001

Authors:

C.Q. Chen, Reinhard Helbig, Rainer Winkler, A. Wysmołek, M. Potemski

Keywords:

4H-SiC, D₁ Bound Exciton, Zeeman Effect

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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