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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Lattice Parameter Measurements of 3C-SiC Thin...

Lattice Parameter Measurements of 3C-SiC Thin Films Grown on 6H-SiC(0001) Substrate Crystals

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

319-322

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.319

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Online since:

January 2001

Authors:

J. Kräußlich, Anton J. Bauer, B. Wunderlich, K. Goetz

Keywords:

Lattice Parameter, Silicon Carbide (SiC), Strain and Stress Components, Thin Film, X-Ray Diffraction (XRD)

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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