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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356

Materials Science Forum Vols. 353-356

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356

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Table of Contents

Paper Title Page

Growth Evolution of Dislocation Loops in Ion Implanted 4H-SiC

Authors: P.O.Å. Persson, L. Hultman

315

Lattice Parameter Measurements of 3C-SiC Thin Films Grown on 6H-SiC(0001) Substrate Crystals

Authors: J. Kräußlich, Anton J. Bauer, B. Wunderlich, K. Goetz

319

Self Diffusion in SiC: the Role of Intrinsic Point Defects

Authors: Alexander Mattausch, M. Bockstedte, Oleg Pankratov

323

Modeling of Boron Diffusion in Silicon Carbide

Authors: Hartmut Bracht, Nicolaas Stolwijk, Michael Laube, Gerhard Pensl

327

Quantitative Modeling of Hydrogen Diffusion and Reactivation of H-Passivated Al-Acceptors in SiC

Authors: C. Hülsen, N. Achtziger, J. Herold, W. Witthuhn

331

Optical Characterization of SiC Materials: Bulk and Implanted Layers

Authors: Jean Camassel, Patrice Vicente, L. Falkovski

335

Line Broadening of Phonons in the Raman Spectra of Isotopically Disordered SiC

Authors: S. Rohmfeld, Martin Hundhausen, Lothar Ley, Norbert Schulze, Gerhard Pensl

341

Micro-Raman and Photoluminescence Study on n-type 6H-SiC

Authors: Zhe Chuan Feng, S.J. Chua, A.G. Evans, John W. Steeds, K.P.J. Williams, G.D. Pitt

345

Low-Frequency Vibrational Spectroscopy in SiC Polytypes

Authors: B. Pajot, C. J. Fall, J.L. Cantin, Hans Jürgen von Bardeleben, R. Jones, Patrick R. Briddon, F. Gendron

349

Free Carrier Diffusion in 4H-SiC

Authors: Paulius Grivickas, A. Martinez, I. Mikulskas, Vytautas Grivickas, R. Tomašiunas, Jan Linnros, Ulf Lindefelt

353