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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356

Materials Science Forum Vols. 353-356

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356

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Table of Contents

Paper Title Page

Generation and Annihilation of Intrinsic-Related Defect Centers in 4H/6H-SiC

Authors: Thomas Frank, Michael Weidner, Hisayoshi Itoh, Gerhard Pensl

439

Implantation Temperature Dependent Deep Level Defects in 4H-SiC

Authors: Boleslaw Formanek, L. Storasta, Anders Hallén, Bengt Gunnar Svensson

443

Boron in SiC: Structure and Kinetics

Authors: M. Bockstedte, Alexander Mattausch, Oleg Pankratov

447

Deep Level Investigation of pn-Junctions formed by MeV Aluminum and Boron Implantation into 4H-SiC

Authors: Adolf Schöner, Nao Miyamoto, Tsunenobu Kimoto, Hiroyuki Matsunami

451

Boron Centers in 4H-SiC

Authors: B. Aradi, Adam Gali, Peter Deák, E. Rauls, Thomas Frauenheim, Nguyen Tien Son

455

Oxygen-Related Defect Centers Observed in 4H/6H-SiC Epitaxial Layers Grown under CO₂ Ambient

Authors: O. Klettke, Gerhard Pensl, Tsunenobu Kimoto, Hiroyuki Matsunami

459

Electrical Activity of Isolated Oxygen Defects in SiC

Authors: Adam Gali, D. Heringer, Peter Deák, Z. Hajnal, Thomas Frauenheim, Wolfgang J. Choyke

463

Beryllium-Related Defect Centers in 4H-SiC

Authors: M. Krieger, Michael Laube, Michael Weidner, Gerhard Pensl

467

Band Gap States of Cr in the Lower Part of the SiC Band Gap

Authors: G. Pasold, N. Achtziger, Joachim Grillenberger, W. Witthuhn

471

Tantalum and Tungsten in Silicon Carbide: Identification and Polytype Dependence of Deep Levels

Authors: Joachim Grillenberger, N. Achtziger, G. Pasold, R. Sielemann, W. Witthuhn

475