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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Tantalum and Tungsten in Silicon Carbide:...

Tantalum and Tungsten in Silicon Carbide: Identification and Polytype Dependence of Deep Levels

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

475-478

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.475

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Online since:

January 2001

Authors:

Joachim Grillenberger, N. Achtziger, G. Pasold, R. Sielemann, W. Witthuhn

Keywords:

Band Offset, Deep Level, DLTS, Level Splitting, Polytype Dependence, Radiotracer, Tantalum, Tungsten

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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