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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Oxygen-Related Defect Centers Observed in...

Oxygen-Related Defect Centers Observed in 4H/6H-SiC Epitaxial Layers Grown under CO₂ Ambient

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

459-462

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.459

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Online since:

January 2001

Authors:

O. Klettke, Gerhard Pensl, Tsunenobu Kimoto, Hiroyuki Matsunami

Keywords:

Admittance Spectroscopy, DLTS, Oxygen, SiC Epilayers

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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