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Band Gap States of Cr in the Lower Part of the SiC Band Gap
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Tantalum and Tungsten in Silicon Carbide: Identification and Polytype Dependence of Deep Levels
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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Beryllium-Related Defect Centers in 4H-SiC

Beryllium-Related Defect Centers in 4H-SiC

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

467-470

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.467

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Online since:

January 2001

Authors:

M. Krieger, Michael Laube, Michael Weidner, Gerhard Pensl

Keywords:

Acceptor, Beryllium, Diffusion, Doping by Implantation, p-Type 4H-SiC

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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