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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Shallow Dopant and Surface Levels in 6H-SiC MOS...

Shallow Dopant and Surface Levels in 6H-SiC MOS Structures Studied by Thermally Stimulated Current Technique

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

479-482

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.479

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Online since:

January 2001

Authors:

V.S. Lysenko, I.P. Osiyuk, T.E. Rudenko, I.P. Tyagulski, E.Ö. Sveinbjörnsson, H.Ö. Ólafsson

Keywords:

Doping Levels, Interface States (or Traps), Re-Oxidation, Thermally Stimulated Current Spectroscopy

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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