Shallow Dopant and Surface Levels in 6H-SiC MOS Structures Studied by Thermally Stimulated Current Technique

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 353-356)

Edited by:

G. Pensl, D. Stephani and M. Hundhausen

Pages:

479-482

DOI:

10.4028/www.scientific.net/MSF.353-356.479

Citation:

V.S. Lysenko et al., "Shallow Dopant and Surface Levels in 6H-SiC MOS Structures Studied by Thermally Stimulated Current Technique", Materials Science Forum, Vols. 353-356, pp. 479-482, 2001

Online since:

January 2001

Export:

Price:

$35.00

In order to see related information, you need to Login.