Paper Titles

Boron in SiC: Structure and Kinetics
p.447

Deep Level Investigation of pn-Junctions formed by MeV Aluminum and Boron Implantation into 4H-SiC
p.451

Boron Centers in 4H-SiC
p.455

Oxygen-Related Defect Centers Observed in 4H/6H-SiC Epitaxial Layers Grown under CO₂ Ambient
p.459

Electrical Activity of Isolated Oxygen Defects in SiC
p.463

Beryllium-Related Defect Centers in 4H-SiC
p.467

Band Gap States of Cr in the Lower Part of the SiC Band Gap
p.471

Tantalum and Tungsten in Silicon Carbide: Identification and Polytype Dependence of Deep Levels
p.475

Shallow Dopant and Surface Levels in 6H-SiC MOS Structures Studied by Thermally Stimulated Current Technique
p.479

HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Electrical Activity of Isolated Oxygen Defects in...

Electrical Activity of Isolated Oxygen Defects in SiC

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2000

Info:

Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

463-466

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.463

Citation:

Cite this paper

Online since:

January 2001

Authors:

Adam Gali, D. Heringer, Peter Deák, Z. Hajnal, Thomas Frauenheim, Wolfgang J. Choyke

Keywords:

Occupancy Level, Oxygen, Spin Distribution, Theory

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2001 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: