Deep Level Investigation of pn-Junctions formed by MeV Aluminum and Boron Implantation into 4H-SiC

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Periodical:

Materials Science Forum (Volumes 353-356)

Edited by:

G. Pensl, D. Stephani and M. Hundhausen

Pages:

451-454

DOI:

10.4028/www.scientific.net/MSF.353-356.451

Citation:

A. Schöner et al., "Deep Level Investigation of pn-Junctions formed by MeV Aluminum and Boron Implantation into 4H-SiC", Materials Science Forum, Vols. 353-356, pp. 451-454, 2001

Online since:

January 2001

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$35.00

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