Paper Titles

Intrinsic Defect Complexes in α-SiC: the Formation of Antisite Pairs
p.435

Generation and Annihilation of Intrinsic-Related Defect Centers in 4H/6H-SiC
p.439

Implantation Temperature Dependent Deep Level Defects in 4H-SiC
p.443

Boron in SiC: Structure and Kinetics
p.447

Deep Level Investigation of pn-Junctions formed by MeV Aluminum and Boron Implantation into 4H-SiC
p.451

Boron Centers in 4H-SiC
p.455

Oxygen-Related Defect Centers Observed in 4H/6H-SiC Epitaxial Layers Grown under CO₂ Ambient
p.459

Electrical Activity of Isolated Oxygen Defects in SiC
p.463

Beryllium-Related Defect Centers in 4H-SiC
p.467

HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Deep Level Investigation of pn-Junctions formed by...

Deep Level Investigation of pn-Junctions formed by MeV Aluminum and Boron Implantation into 4H-SiC

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2000

Info:

Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

451-454

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.451

Citation:

Cite this paper

Online since:

January 2001

Authors:

Adolf Schöner, Nao Miyamoto, Tsunenobu Kimoto, Hiroyuki Matsunami

Keywords:

Carbon Coimplantation, Implantation Induced Defects, Implanted pn-Junction, Isothermal Capacitance Transient Spectroscopy ICTS, Post Implantation Anneal

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2001 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: