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Boron in SiC: Structure and Kinetics
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Deep Level Investigation of pn-Junctions formed by MeV Aluminum and Boron Implantation into 4H-SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Implantation Temperature Dependent Deep Level...

Implantation Temperature Dependent Deep Level Defects in 4H-SiC

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

443-446

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.443

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Online since:

January 2001

Authors:

Boleslaw Formanek, L. Storasta, Anders Hallén, Bengt Gunnar Svensson

Keywords:

Deep Level, DLTS, Implantation, S-Level, Temperature Stable Defects

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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