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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Proton Irradiation Induced Defects in 4H-SiC

Proton Irradiation Induced Defects in 4H-SiC

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

431-434

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.431

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Online since:

January 2001

Authors:

L. Storasta, F.H.C. Carlsson, S.G. Sridhara, Boleslaw Formanek, Peder Bergman, Anders Hallén, Erik Janzén

Keywords:

DLTS, Hole Traps, Intrinsic Defect, Minority Carrier Transient Spectroscopy, Proton Irradiation

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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