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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Donor Densities and Donor Energy Levels in 3C-SiC...

Donor Densities and Donor Energy Levels in 3C-SiC Determined by a New Method Based on Hall-Effect Measurements

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

495-498

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.495

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Online since:

January 2001

Authors:

Hideharu Matsuura, Yasuichi Masuda, Yi Chen, Shigehiro Nishino

Keywords:

Donor Density, Donor Energy Level, Free Carrier Concentration Spectroscopy (FCCS), Graphical Peak Analysis, Hall-Effect Measurement, HexaMethylDisilane, Temperature Dependence of Majority-Carrier Concentration

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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