Donor Densities and Donor Energy Levels in 3C-SiC Determined by a New Method Based on Hall-Effect Measurements

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 353-356)

Edited by:

G. Pensl, D. Stephani and M. Hundhausen

Pages:

495-498

DOI:

10.4028/www.scientific.net/MSF.353-356.495

Citation:

H. Matsuura et al., "Donor Densities and Donor Energy Levels in 3C-SiC Determined by a New Method Based on Hall-Effect Measurements", Materials Science Forum, Vols. 353-356, pp. 495-498, 2001

Online since:

January 2001

Export:

Price:

$35.00

In order to see related information, you need to Login.