Paper Titles

Donor Densities and Donor Energy Levels in 3C-SiC Determined by a New Method Based on Hall-Effect Measurements
p.495

Intrinsic Defects in Silicon Carbide Polytypes
p.499

Radiation-Induced Pair Defects in 6H-SiC Studied by Optically Detected Magnetic Resonance
p.505

Intrinsic Defects in 6H-SiC Generated by Electron Irradiation at the Silicon Displacement Threshold
p.509

EPR Study of Proton Implantation Induced Intrinsic Defects in 6H- and 4H-SiC
p.513

EPR Study of Carbon Vacancy-Related Defects in Electron-Irradiated 6H-SiC
p.517

EPR of Deep Al and Deep B in Heavily Al-doped as Grown 4H-SiC
p.521

The Electronic Structure of the N Donor Center in 4H-SiC and 6H-SiC
p.525

Identification of Iron and Nickel in 6H-SiC by Electron Paramagnetic Resonance
p.529

HomeMaterials Science ForumMaterials Science Forum Vols. 353-356EPR Study of Proton Implantation Induced Intrinsic...

EPR Study of Proton Implantation Induced Intrinsic Defects in 6H- and 4H-SiC

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2000

Info:

Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

513-516

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.513

Citation:

Cite this paper

Online since:

January 2001

Authors:

Hans Jürgen von Bardeleben, J.L. Cantin

Keywords:

Defect, Electron Paramagnetic Resonance (EPR), Implantation Damage, Vacancy Defects

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2001 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: