Paper Titles

Intrinsic Defects in Silicon Carbide Polytypes
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Radiation-Induced Pair Defects in 6H-SiC Studied by Optically Detected Magnetic Resonance
p.505

Intrinsic Defects in 6H-SiC Generated by Electron Irradiation at the Silicon Displacement Threshold
p.509

EPR Study of Proton Implantation Induced Intrinsic Defects in 6H- and 4H-SiC
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EPR Study of Carbon Vacancy-Related Defects in Electron-Irradiated 6H-SiC
p.517

EPR of Deep Al and Deep B in Heavily Al-doped as Grown 4H-SiC
p.521

The Electronic Structure of the N Donor Center in 4H-SiC and 6H-SiC
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Identification of Iron and Nickel in 6H-SiC by Electron Paramagnetic Resonance
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Calculated Positron Annihilation Parameters for Defects in SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356EPR Study of Carbon Vacancy-Related Defects in...

EPR Study of Carbon Vacancy-Related Defects in Electron-Irradiated 6H-SiC

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

517-520

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.517

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Online since:

January 2001

Authors:

V.Ya. Bratus, I.N. Makeeva, S.M. Okulov, T.L. Petrenko, T.T. Petrenko, Hans Jürgen von Bardeleben

Keywords:

Defect, Electron Irradiation, Electron Paramagnetic Resonance (EPR), Silicon Carbide (SiC)

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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