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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Radiation-Induced Pair Defects in 6H-SiC Studied...

Radiation-Induced Pair Defects in 6H-SiC Studied by Optically Detected Magnetic Resonance

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

505-508

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.505

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Online since:

January 2001

Authors:

Th. Lingner, Siegmund Greulich-Weber, Johann Martin Spaeth

Keywords:

Absorption, Annealing, Antisite, Defect, Defect Formation, Electron Paramagnetic Resonance (EPR), Luminescence, MCDA, Radiation Defect, Vacancy

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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