Band Gap States of Cr in the Lower Part of the SiC Band Gap
p.471
p.471
Tantalum and Tungsten in Silicon Carbide: Identification and Polytype Dependence of Deep Levels
p.475
p.475
Shallow Dopant and Surface Levels in 6H-SiC MOS Structures Studied by Thermally Stimulated Current Technique
p.479
p.479
Intrinsic Mobility of Conduction Electrons in 4H-SiC
p.483
p.483
A Study of Band to Band Tunneling with Application to High-Field Transport in Hexagonal SiC Polytypes
p.487
p.487
Thermopower Measurements in 4H-SiC and Theoretical Calculations Considering the Phonon Drag Effect
p.491
p.491
Donor Densities and Donor Energy Levels in 3C-SiC Determined by a New Method Based on Hall-Effect Measurements
p.495
p.495
Intrinsic Defects in Silicon Carbide Polytypes
p.499
p.499
Radiation-Induced Pair Defects in 6H-SiC Studied by Optically Detected Magnetic Resonance
p.505
p.505
A Study of Band to Band Tunneling with Application to High-Field Transport in Hexagonal SiC Polytypes
Abstract:
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Periodical:
Materials Science Forum (Volumes 353-356)
Pages:
487-490
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Online since:
January 2001
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© 2001 Trans Tech Publications Ltd. All Rights Reserved
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