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The Electronic Structure of the N Donor Center in 4H-SiC and 6H-SiC
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Identification of Iron and Nickel in 6H-SiC by Electron Paramagnetic Resonance
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Calculated Positron Annihilation Parameters for Defects in SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Calculated Positron Annihilation Parameters for...

Calculated Positron Annihilation Parameters for Defects in SiC

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

533-536

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.533

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Online since:

January 2001

Authors:

T.E.M. Staab, L.M. Torpo, M.J. Puska, Risto M. Nieminen

Keywords:

Divacancy, Irradiation, Monovacancy, Positron Annihilation Parameters

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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