Paper Titles

The Electronic Structure of the N Donor Center in 4H-SiC and 6H-SiC
p.525

Identification of Iron and Nickel in 6H-SiC by Electron Paramagnetic Resonance
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Calculated Positron Annihilation Parameters for Defects in SiC
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Annealing Process of Defects in Epitaxial SiC Induced by He and Electron Irradiation: Positron Annihilation Study
p.537

Recent Progress in SiC Epitaxial Growth and Device Processing Technology
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Doping of Silicon Carbide by Ion Implantation
p.549

Neutron Irradiation of 4H SiC
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Techniques for Depth Profiling of Dopants in 4H-SiC
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Growth of δ-Doped SiC Epitaxial Layers
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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Recent Progress in SiC Epitaxial Growth and Device...

Recent Progress in SiC Epitaxial Growth and Device Processing Technology

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

543-548

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.543

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Online since:

January 2001

Authors:

Tsunenobu Kimoto, Hiroshi Yano, S. Tamura, Nao Miyamoto, Keiko Fujihira, Yuki Negoro, Hiroyuki Matsunami

Keywords:

(11-20), Homoepitaxial Growth, Ion Implantation, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), PiN Diode

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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