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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Growth of δ-Doped SiC Epitaxial Layers

Growth of δ-Doped SiC Epitaxial Layers

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

563-566

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.563

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Online since:

January 2001

Authors:

S. Karlsson, C. Adås, Andrey O. Konstantinov, Margareta K. Linnarsson

Keywords:

Delta-Doping, Vapor-Phase Epitaxy (VPE)

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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