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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356High Dose Implantation in 6H-SiC

High Dose Implantation in 6H-SiC

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

579-582

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.579

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Online since:

January 2001

Authors:

V. Heera, Wolfgang Skorupa, J. Stoemenos, Béla Pécz

Keywords:

6H-SiC, Al₄C₃, Aluminum (Al), C, Diamond, High-Fluence Implantation, Phase Formations, TEM

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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