Paper Titles

High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF Annealing
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Enhancement of Electrical Activation of Aluminum Acceptors in 6H-SiC by Co-Implantation of Carbon Ions
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High Dose Implantation in 6H-SiC
p.579

Precipitate Formation in Heavily Al-Doped 4H-SiC Layers
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Flash Lamp Annealing of Implantation Doped p- and n-Type 6H-SiC
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Structural and Electrical Characterization of Ion Beam Synthesized and n-Doped SiC Layers
p.591

Channeling Measurements of Ion Implantation Damage in 4H-SiC
p.595

The Monte Carlo Binary Collision Approximation Applied to the Simulation of the Ion Implantation Process in Single Crystal SiC: High Dose Effects
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Formation of Large Area Al Contacts on 6H- and 4H-SiC Substrates
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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Flash Lamp Annealing of Implantation Doped p- and...

Flash Lamp Annealing of Implantation Doped p- and n-Type 6H-SiC

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

587-590

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.587

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Online since:

January 2001

Authors:

D. Panknin, T. Gebel, Wolfgang Skorupa

Keywords:

Doping, Ion Implantation, Short Time Annealing, Silicon Carbide (SiC)

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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