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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Channeling Measurements of Ion Implantation Damage...

Channeling Measurements of Ion Implantation Damage in 4H-SiC

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

595-598

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.595

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Online since:

January 2001

Authors:

Andrej Yu. Kuznetsov, Martin S. Janson, Anders Hallén, Bengt Gunnar Svensson, C. Jagadish, H. Grünleitner, Gerhard Pensl

Keywords:

Aluminum (Al), Annealing, Displaced Silicon Atoms, Implantation Induced Defects, Interstitial, Vacancy

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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