Effect of Residual Damage on Carrier Transport Properties in a 4H-SiC Double Implanted Bipolar Junction Transistor
p.567
p.567
High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF Annealing
p.571
p.571
Enhancement of Electrical Activation of Aluminum Acceptors in 6H-SiC by Co-Implantation of Carbon Ions
p.575
p.575
High Dose Implantation in 6H-SiC
p.579
p.579
Precipitate Formation in Heavily Al-Doped 4H-SiC Layers
p.583
p.583
Flash Lamp Annealing of Implantation Doped p- and n-Type 6H-SiC
p.587
p.587
Structural and Electrical Characterization of Ion Beam Synthesized and n-Doped SiC Layers
p.591
p.591
Channeling Measurements of Ion Implantation Damage in 4H-SiC
p.595
p.595
The Monte Carlo Binary Collision Approximation Applied to the Simulation of the Ion Implantation Process in Single Crystal SiC: High Dose Effects
p.599
p.599
Precipitate Formation in Heavily Al-Doped 4H-SiC Layers
Abstract:
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Periodical:
Materials Science Forum (Volumes 353-356)
Pages:
583-586
Citation:
Online since:
January 2001
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Сopyright:
© 2001 Trans Tech Publications Ltd. All Rights Reserved
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