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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Effect of Residual Damage on Carrier Transport...

Effect of Residual Damage on Carrier Transport Properties in a 4H-SiC Double Implanted Bipolar Junction Transistor

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

567-570

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.567

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Online since:

January 2001

Authors:

S. Ortolland, Nicolas G. Wright, C. Mark Johnson, A.P. Knights, Paul G. Coleman, C.P. Burrows, A.J. Pidduck

Keywords:

Annealing, Atomic Force Microscope (AFM), Bipolar Junction Transistor (BJT), Bipolar Transistor, Implantation, PAS, RBS

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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