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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Techniques for Depth Profiling of Dopants in...

Techniques for Depth Profiling of Dopants in 4H-SiC

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

559-562

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.559

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Online since:

January 2001

Authors:

John Österman, Anders Hallén, Srinivasan Anand, Margareta K. Linnarsson, H. Andersson, Boleslaw Formanek, D. Panknin, Wolfgang Skorupa

Keywords:

Dopant Activation, Dopant Profile, Scanning Electron Microscope (SEM), SCM, SRP

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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