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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356High Electrical Activation of Aluminium and...

High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF Annealing

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

571-574

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.571

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Online since:

January 2001

Authors:

Mihai Lazar, Laurent Ottaviani, Marie Laure Locatelli, Christophe Raynaud, Dominique Planson, Erwan Morvan, Philippe Godignon, Wolfgang Skorupa, Jean-Pierre Chante

Keywords:

Annealing, Atomic Force Microscope (AFM), Electrical Activation, Ion Implantation, Recrystallization RX, SIMS

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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