High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF Annealing

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Periodical:

Materials Science Forum (Volumes 353-356)

Edited by:

G. Pensl, D. Stephani and M. Hundhausen

Pages:

571-574

DOI:

10.4028/www.scientific.net/MSF.353-356.571

Citation:

M. Lazar et al., "High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF Annealing", Materials Science Forum, Vols. 353-356, pp. 571-574, 2001

Online since:

January 2001

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$35.00

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