Doping of Silicon Carbide by Ion Implantation

Abstract:

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Periodical:

Materials Science Forum (Volumes 353-356)

Edited by:

G. Pensl, D. Stephani and M. Hundhausen

Pages:

549-554

DOI:

10.4028/www.scientific.net/MSF.353-356.549

Citation:

B. G. Svensson et al., "Doping of Silicon Carbide by Ion Implantation", Materials Science Forum, Vols. 353-356, pp. 549-554, 2001

Online since:

January 2001

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$35.00

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