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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Doping of Silicon Carbide by Ion Implantation

Doping of Silicon Carbide by Ion Implantation

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

549-554

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.549

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Online since:

January 2001

Authors:

Bengt Gunnar Svensson, Anders Hallén, Margareta K. Linnarsson, Andrej Yu. Kuznetsov, Martin S. Janson, Boleslaw Formanek, John Österman, P.O.Å. Persson, L. Hultman, L. Storasta, F.H.C. Carlsson, Peder Bergman, C. Jagadish, Erwan Morvan

Keywords:

Defect Recombination, Dopant Activation, Dopant Compensation, Interstitial Clusters, Ostwald Ripening, Transient Enhanced Diffusion TED

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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