The Monte Carlo Binary Collision Approximation Applied to the Simulation of the Ion Implantation Process in Single Crystal SiC: High Dose Effects

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Periodical:

Materials Science Forum (Volumes 353-356)

Edited by:

G. Pensl, D. Stephani and M. Hundhausen

Pages:

599-602

DOI:

10.4028/www.scientific.net/MSF.353-356.599

Citation:

G. Lulli et al., "The Monte Carlo Binary Collision Approximation Applied to the Simulation of the Ion Implantation Process in Single Crystal SiC: High Dose Effects", Materials Science Forum, Vols. 353-356, pp. 599-602, 2001

Online since:

January 2001

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$35.00

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