Precipitate Formation in Heavily Al-Doped 4H-SiC Layers
p.583
p.583
Flash Lamp Annealing of Implantation Doped p- and n-Type 6H-SiC
p.587
p.587
Structural and Electrical Characterization of Ion Beam Synthesized and n-Doped SiC Layers
p.591
p.591
Channeling Measurements of Ion Implantation Damage in 4H-SiC
p.595
p.595
The Monte Carlo Binary Collision Approximation Applied to the Simulation of the Ion Implantation Process in Single Crystal SiC: High Dose Effects
p.599
p.599
Formation of Large Area Al Contacts on 6H- and 4H-SiC Substrates
p.603
p.603
Ru Schottky Barrier Contacts to n- and p-type 6H-SiC
p.607
p.607
Stability of Molybdenum Schottky Contact to Silicon Carbide
p.611
p.611
Effects of Thermal Annealing on Cu/6H-SiC Schottky Properties
p.615
p.615
The Monte Carlo Binary Collision Approximation Applied to the Simulation of the Ion Implantation Process in Single Crystal SiC: High Dose Effects
Abstract:
You might also be interested in these eBooks
Info:
Periodical:
Materials Science Forum (Volumes 353-356)
Pages:
599-602
Citation:
Online since:
January 2001
Authors:
Keywords:
Price:
Сopyright:
© 2001 Trans Tech Publications Ltd. All Rights Reserved
Share:
Citation: