Paper Titles

The Monte Carlo Binary Collision Approximation Applied to the Simulation of the Ion Implantation Process in Single Crystal SiC: High Dose Effects
p.599

Formation of Large Area Al Contacts on 6H- and 4H-SiC Substrates
p.603

Ru Schottky Barrier Contacts to n- and p-type 6H-SiC
p.607

Stability of Molybdenum Schottky Contact to Silicon Carbide
p.611

Effects of Thermal Annealing on Cu/6H-SiC Schottky Properties
p.615

Electrochemical Characterization of p-Type Hexagonal SiC
p.619

A Novel Technique for Shallow Angle Beveling of SiC to Prevent Surface Breakdown in Power Devices
p.623

Interface States of SiO₂/SiC on (11-20) and (0001) Si Faces
p.627

Interface Properties of MOS Structures Formed on 4H-SiC C(000-1) Face
p.631

HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Effects of Thermal Annealing on Cu/6H-SiC Schottky...

Effects of Thermal Annealing on Cu/6H-SiC Schottky Properties

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2000

Info:

Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

615-618

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.615

Citation:

Cite this paper

Online since:

January 2001

Authors:

Tomoaki Hatayama, Takashi Suezaki, Kazuaki Kawahito, Yukiharu Uraoka, Takashi Fuyuki

Keywords:

Annealing, Barrier Height, Copper (Cu), On-Resistance, Schottky Rectifiers, Silicide

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2001 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: