Paper Titles

Ru Schottky Barrier Contacts to n- and p-type 6H-SiC
p.607

Stability of Molybdenum Schottky Contact to Silicon Carbide
p.611

Effects of Thermal Annealing on Cu/6H-SiC Schottky Properties
p.615

Electrochemical Characterization of p-Type Hexagonal SiC
p.619

A Novel Technique for Shallow Angle Beveling of SiC to Prevent Surface Breakdown in Power Devices
p.623

Interface States of SiO₂/SiC on (11-20) and (0001) Si Faces
p.627

Interface Properties of MOS Structures Formed on 4H-SiC C(000-1) Face
p.631

Steam Annealing Effects on CV Characteristics of MOS Structures on (11-20) Face of 4H-SiC
p.635

Role of H₂ in Low Temperature Post-Oxidation Anneal for Gate Oxide on 6H-SiC
p.639

HomeMaterials Science ForumMaterials Science Forum Vols. 353-356A Novel Technique for Shallow Angle Beveling of...

A Novel Technique for Shallow Angle Beveling of SiC to Prevent Surface Breakdown in Power Devices

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2000

Info:

Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

623-626

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.623

Citation:

Cite this paper

Online since:

January 2001

Authors:

J. Neil Merrett, David C. Sheridan, John R. Williams, Chin Che Tin, J.D. Cressler

Keywords:

Beveling, Edge Termination, Etch Mask, Power Device, Reactive Ion Etching

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2001 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: